Nexperia Power Gallium Nitride (GaN) FETs - Performance, Efficiency, Reliability


  • VDS: 650 V
  • Threshold voltage: +4 V
  • Transient over-voltage capability VDS: 800 V
  • VGS range: ±20 V

GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride FET in the industry recognizable TO-247 package. Whether designing onboard charging systems and inverter drive for the next generation of battery-electric vehicles or a power supply for the latest 5G telecommunication network, Nexperia's GaN FETs will be key to your solution. Nexperia's GaN technology offers superior reliability, high efficiency and simplified driver requirements with industry-standard gate drive voltages.

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  • RDS(ON) Max: 60 mΩ
  • Package: TO-247 (SOT429)
  • Easy to drive
  • Drive voltages of 0 to +10 V or 12 V for drive, and 4 V threshold
  • Inherently safe against parasitic turn-on
  • Reduced losses in reverse conduction mode (very low source-drain voltage in reverse conduction mode)
  • Ultra-low Qrr for fast switching
  • Transient over-voltage capability
  • Robust gate oxide
  • On-Board-Chargers (OBC)
  • DC/DC Power Conversion
  • Battery Storage & UPS
  • Industrial Automation
  • Server & Telecom Power Supplies
  • Traction Inverter
  • Totem Pole PFC
  • Multiphase inverters
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