SISS12DN

New SiSS12DN 40 V MOSFET in PowerPAK® 1212-8S Package - 3.3 x 3.3 mm

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  • Maximum ON-Resistance Down to 1.98 mΩ at 10 V Minimizes Conduction Losses
  • Low COSS of 680 pF and Gate Charge of 28.7 nC Reduces Switching Power Losses
  • Offered in Compact 3.3 x 3.3 mm PowerPAK 1212-8S Package
  • 100% RG- and UIS-tested, RoHS-Compliant, and Halogen-Free

Vishay introduces the new 40 V TrenchFET® Gen IV N-channel power MOSFET. Best in class COSS times ON-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion designs employing zero-voltage-switching (ZVS) or switch-tank topology. SISS12DN utilizes 65% less PCB space than similar solutions in 6 x 5 packages, enabling higher power density. Minimizing conduction and switching losses simultaneously to increase efficiency for several building blocks in power supplies.

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Key Specifications:

  • Drain source voltage: 40 V
  • RDSON max. at:
  • 10 V: 1.98 mΩ
  • 4.5 V: 2.74 mΩ
  • COSS typical: 680 pF
  • Gate charge: 28.7 nC
  • Output charge typical: 28 nC

Market Applications:

  • Synchronous rectification in AC/DC power supplies
  • Primary- and secondary-side switching in DC/DC converters targeting telecom, server, and medical equipment
  • Half-bridge power stage and buck-boost converters in voltage regulation for server and telecom equipment
  • OR-ing functionality in telecom and server power supplies
  • Power stage for switch capacitor or switch tank converters
  • Motor drive control in power tools and industrial equipment
  • Battery protection and charging in battery management modules

 

  • Synchronous Rectification in AC/DC Power Supplies
  • OR-ing Functionality in Telecom and Server Power Supplies
  • Power Stage for Switch Capacitor or Switch Tank Converters
  • Motor Drive Control in Power Tools and Industrial EG.
  • Battery Protection and Charging in Battery Mgr. Module
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