Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, D2PAK−7L

D2PAK 7 EG Logo1.jpg
D2PAK 7 EG Logo1.jpg

  • 1200 V Rated
  • High Speed Switching and Low Capacitance
  • Max RDS(ON) = 28 mΩ at VGS = 20 V, ID = 60 A
  • Qualified for Automotive According to AEC-Q101

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

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  • 100% UIL Tested
  • Pb-Free, RoHS Compliant
  • PFC
  • Boost Inverter
  • PV Charging
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive
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