GaN-Based InnoSwitch3

Advanced GaN Technology Yields Significant Increase in Power and Efficiency


  • Up To 95% Efficiency Across Full Load Range, up to 100 W in Adapter Without Heatsink
  • Using an Internally Developed High-Voltage GaN Switch Technology
  • Integrated FluxLinkâ„¢, HIPOT-isolated, Feedback Link
  • Space-saving InSOP-24D Package

The Quasi-resonant InnoSwitch3-CP, InnoSwitch3-EP, and InnoSwitch3-Pro ICs combine primary, secondary, and feedback circuits in a single surface-mounted package. In the newly released family members, GaN switches replace the traditional silicon high-voltage transistors on the primary side of the IC, reducing conduction losses when current is flowing, and considerably reducing switching losses during operation. This results in substantially less wasted energy and therefore increased efficiency and power delivery from the space-saving InSOP-24D package.

Expand All
  • Quasi-Resonant (QR)/CCM Flyback Controller, High-voltage Primary-side PowiGaN™ Switch, Secondary-side Sensing and Sync. Rectification Driver
  • Integrated FluxLink™, HIPOT-isolated, Feedback Link
  • Easily Interfaces to Load-directed and Fast-charge Protocol ICs
  • Constant Power (CP) Profile Minimizes Charging Time with Continuous Adjustment of Output Current and Voltage
  • Accurate CV/CC/CP, Independent of External Components
  • External IS Resistor Allows Custom CC Programming
  • Instantaneous Transient Response With 0% - 100% - 0% Load Step
  • Digitally Controlled Via I²C Interface (Pro)
  • Dynamic Adjustment of Power Supply Voltage and Current (Pro)
  • Telemetry Status Read-back with Processor Interrupt (Pro)
  • Comprehensive Set of Configurable Features (Pro)


  • High-Efficiency Fly-back Designs
  • High Current Chargers/Adapters
  • USB-PD
  • Set-top Boxes
  • Appliances
  • Networking
Download PDF Add to List Add Comment Related devices