- Fast Overwrite: No Limitation Due to Block Access, No Erase Time, No Writing Pause Time
- High Endurance: 10 Trillions Read/Write Cycles
- Low Power Consumption: Charge Pump Not Necessary
- Operating Temperature: -40 °C to 125 °C
The MB85RS64VY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming nonvolatile memory cells. MB85RS64VY adopts the Serial Peripheral Interface (SPI). It is able to retain data without using a back-up battery, as is needed for SRAM. It's memory cells can endure up to 1013 read/write operations, which is a significant improvement over the number of read/write operations supported by Flash memory and EEPROM.
- Bit Configuration: 8,192 Words x 8 Bits
- Serial Peripheral Interface: SPI (Serial Peripheral Interface) Correspondent to SPI Mode 0 (0, 0) and Mode 3 (1, 1)
- Operating Frequency: 25 MHz (max, at 2.7 V to 4.5 V), 33 MHz (max, at 4.5 V to 5.5 V)
- Data Retention: 30 Years (+85 °C)
- 10.9 Years (+105 °C)
- 3.3 Years (+125 °C)
- Under Evaluation for More than 3.3 Years (+125 °C)
- Operating Power Supply Voltage: 2.7 V to 5.5 V
- 1.8 mA (max at 25 MHz), 2.3 mA (max at 33 MHz)
- Standby Current 30 µa (max)
- Sleep Current 12 µa (max)
- Package: 8-Pin Plastic SOP (FPT-8P-M10)
- 8-Pin Plastic SON (LCC-8P-M04)
- RoHS Compliant
- Direct Data Logging
- Parameter Storage
- Back-Up Memory
- Real-Time Data Writing