N‐Channel Silicon Carbide MOSFET 1200 V, 80 mΩ, TO247−3L


  • 1200V rated
  • High Speed Switching and Low Capacitance
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
  • Qualified for Automotive According to AEC−Q101 available

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.


Two different part numbers for industrial grade (NTHL080N120SC1) and automotive grade (NVHL080N120SC1) are available.

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  • 100% UIL Tested
  • Pb−Free, RoHS Compliant
  • Qualified for Automotive According to AEC−Q101 available
  • PFC
  • Boost Inverter
  • PV Charging
  • Automotive grade version:
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive