J-SERIES

Silicon Photomultiplier Sensors, J-Series (SiPM)

MicroFJ-300XX-TSV-Angle.jpg
MicroFJ-300XX-TSV-Angle.jpg

  • Optimized for high-performance timing applications, such as ToF-PET
  • TSV package results in almost zero deadspace allowing high fill factor arrays
  • Industry-leading uniformity
  • 3 mm, 4 mm and 6 mm sensor sizes

ON Semiconductor's J-Series silicon photomultiplier (SiPM) sensors have been optimized for high-performance timing applications, such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a photon detection efficiency (PDE) of 50% and with sensitivity extending down into the UV. They feature industry-leading low dark count rates of 50 kHz/mm2 and because the sensors are created using a high-volume CMOS silicon process they feature an exceptional breakdown voltage uniformity of ±250 mV.

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  • High-density microcells
  • J-Series sensors feature ON Semiconductor's unique 'fast output' terminal
  • Temperature stability of 21.5 mV/°C
  • Exceptional breakdown voltage uniformity of ±250 mV
  • Available in a reflow solder compatible TSV chip-scale package
  • Ultra-low dark count rates of 50 kHz/mm2 typical
  • Optimized for high-performance timing applications, such as ToF-PET
  • 3 mm, 4 mm and 6 mm sensor sizes
  • Bias voltage of <30 V
  • Results in a 50% photon detection efficiency (PDE) at 420 nm
  • Improved signal rise time and the microcell recovery time
  • Negates the need for active voltage control
  • Industry-leading uniformity
  • TSV package results in almost zero deadspace allowing the creation of high fill factor arrays and is ferrous-metal free
  • Medical Imaging
  • Hazard & Threat
  • 3D Ranging & Sensing
  • Biophotonics & Sciences
  • High Energy Physics
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