AFBR-S4N44C013

NUV-HD Single Silicon Photo Multiplier

AFBR-S4N44C013.jpg
AFBR-S4N44C013.jpg

  • High PDE
  • Four-side tileable
  • Highly transparent glass protection layer
  • Operating temperature range from -20°C to +50°C.

The AFBR-S4N44C013 is a single silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.

High photo-detection efficiency (PDE), Excellent timing resolution, Large dynamic range, High tile fill factor (TFF)

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The AFBR-S4N44C013 is a single silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.

 

The active area is 3.72 x 3.72 mm2. High packing density of the single chips is achieved using trough-silicon-via (TSV) technology. Larger areas can be covered by tiling multiple AFBR-S4N44C013 arrays almost without any edge losses. The passivation layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue- and near-UV region of the light spectrum.

 

The array is best suited for the detection of low-level pulsed light sources, especially for detection of Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials -- LSO, LYSO, BGO, NaI, CsI, BaF and LaBr, as examples

  • X-Ray and gamma ray detection
  • Nuclear medicine
  • Positron emission tomography
  • Time correlated single photon counting
  • Physics experiments
  • Evaluation and prototyping
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